Ixys
IXFN200N10P
Power Field-Effect Transistor, 200A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power680W
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Technical Specifications
Ixys IXFN200N10P technical specifications.
General
Package/Case
SOT-227-4
Continuous Drain Current (ID)
200A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
7.5mR
Drain to Source Voltage (Vdss)
100V
Fall Time
90ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
7.6nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
680W
Mount
Chassis Mount
Package Quantity
10
Packaging
Box
Polarity
N-CHANNEL
Power Dissipation
680W
Rds On Max
7.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Polar™
Threshold Voltage
5V
Turn-Off Delay Time
150ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFN200N10P Datasheet
Download the complete datasheet for Ixys IXFN200N10P to view detailed technical specifications.
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