N-channel Power MOSFET featuring low Rds(on) for efficient power switching. Designed for high current applications with a continuous drain current rating of 210A. Offers a low gate charge for fast switching speeds. Suitable for demanding power management circuits.
Ixys IXFN210N30X3 technical specifications.
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Ixys IXFN210N30X3 to view detailed technical specifications.
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