N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and a maximum continuous drain current of 230A. This silicon metal-oxide semiconductor FET offers a low drain-source on-resistance of 6mΩ, enabling efficient power handling with a maximum power dissipation of 700W. Designed for chassis mounting with screw termination, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key electrical characteristics include a 4V nominal gate-source voltage and a 19nF input capacitance.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power700W
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Technical Specifications
Ixys IXFN230N10 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 230A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 6MR |
| Dual Supply Voltage | 100V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.6mm |
| Input Capacitance | 19nF |
| Lead Free | Lead Free |
| Length | 38.23mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Chassis Mount, Screw |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Screw |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 112ns |
| Turn-On Delay Time | 40ns |
| Width | 25.42mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN230N10 Datasheet
Download the complete datasheet for Ixys IXFN230N10 to view detailed technical specifications.
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