Ixys
IXFN23N100
Power Field-Effect Transistor, 23A I(D), 1000V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power568W
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Technical Specifications
Ixys IXFN23N100 technical specifications.
General
Package/Case
SOT-227-4
Continuous Drain Current (ID)
23A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
390mR
Drain to Source Voltage (Vdss)
1kV
Fall Time
21ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
600W
Mount
Chassis Mount
Package Quantity
10
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
568W
RoHS Compliant
Yes
Turn-Off Delay Time
75ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFN23N100 Datasheet
Download the complete datasheet for Ixys IXFN23N100 to view detailed technical specifications.
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