N-Channel Power MOSFET featuring 800V drain-source breakdown voltage and 27A continuous drain current. Offers low 300mΩ drain-source on-resistance. Designed for chassis mounting in a SOT-227-4 package, this silicon metal-oxide semiconductor FET boasts a maximum power dissipation of 520W. Includes fast switching characteristics with a 40ns fall time and 75ns turn-off delay.
PackageSOT-227-4
Current Rating27A
MountingChassis Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFN27N80 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 27A |
| Current Rating | 27A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 300mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.74nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 520W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 520W |
| Rds On Max | 300mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN27N80 Datasheet
Download the complete datasheet for Ixys IXFN27N80 to view detailed technical specifications.
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