N-Channel Power MOSFET, 800V Vds, 27A Continuous Drain Current, 320mΩ Rds On. Features 13ns fall time and 50ns turn-off delay. Operates from -55°C to 150°C with 520W max power dissipation. Silicon Metal-oxide Semiconductor FET in a SOT-227-4 MINIBLOC-4 package, designed for chassis mounting with screw termination.
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power520W
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Technical Specifications
Ixys IXFN27N80Q technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 320mR |
| Drain to Source Voltage (Vdss) | 800V |
| Dual Supply Voltage | 800V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.6nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 520W |
| Mount | Chassis Mount |
| Nominal Vgs | 4.5V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 520W |
| Rds On Max | 320mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Screw |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 50ns |
| Weight | 0.04kg |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN27N80Q Datasheet
Download the complete datasheet for Ixys IXFN27N80Q to view detailed technical specifications.
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