N-Channel Power MOSFET featuring 85V drain-source breakdown voltage and a maximum continuous drain current of 280A. This silicon Metal-oxide Semiconductor FET offers a low drain-source on-resistance of 4.4mR at 25°C. Designed for high power applications with a maximum power dissipation of 700W, it operates within a temperature range of -55°C to 150°C. The component is housed in a SOT-227-4 package, suitable for chassis mounting via screw.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power700W
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Technical Specifications
Ixys IXFN280N085 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 280A |
| Drain to Source Breakdown Voltage | 85V |
| Drain to Source Resistance | 4.4mR |
| Drain to Source Voltage (Vdss) | 85V |
| Drain-source On Resistance-Max | 390mR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 19nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| Radiation Hardening | No |
| Rds On Max | 4.4mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 200ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN280N085 Datasheet
Download the complete datasheet for Ixys IXFN280N085 to view detailed technical specifications.
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