N-Channel Power MOSFET, 1200V Drain to Source Breakdown Voltage, 32A Continuous Drain Current, and 0.35ohm Drain to Source Resistance. This silicon Metal-oxide Semiconductor FET features a 780W maximum power dissipation and operates from -55°C to 150°C. Designed for chassis mounting with screw termination, it offers a 22ns fall time and 300ns reverse recovery time.
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power780W
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Technical Specifications
Ixys IXFN32N120 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Dual Supply Voltage | 1.2kV |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 15.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780W |
| Mount | Chassis Mount |
| Nominal Vgs | 5V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 780W |
| Rds On Max | 350mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 300ns |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Screw |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 98ns |
| Weight | 3.6E-05kg |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN32N120 Datasheet
Download the complete datasheet for Ixys IXFN32N120 to view detailed technical specifications.
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