N-channel power MOSFET featuring 1000V drain-source breakdown voltage and 38A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 210mΩ drain-source on-resistance. Designed for chassis mounting with a screw terminal, it operates within a -55°C to 150°C temperature range and boasts a maximum power dissipation of 1kW. Key switching parameters include a 40ns fall time and 71ns turn-off delay.
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| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 210mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 210MR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 24nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1kW |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1kW |
| Radiation Hardening | No |
| Rds On Max | 210mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Turn-Off Delay Time | 71ns |
| RoHS | Compliant |
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