The IXFN38N100Q2 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 38A and a drain to source breakdown voltage of 1kV. The device has a maximum power dissipation of 890W and a gate to source voltage of 30V. It is packaged in a SOT-227-4 package and is lead free and RoHS compliant.
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power890W
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Technical Specifications
Ixys IXFN38N100Q2 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 7.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 890W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 890W |
| Rds On Max | 250mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 57ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN38N100Q2 Datasheet
Download the complete datasheet for Ixys IXFN38N100Q2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.