N-Channel Power MOSFET, 800V Vdss, 39A Continuous Drain Current (ID), and 190mR Rds On. This silicon, metal-oxide semiconductor FET features a 1-element configuration and a 5V threshold voltage. Designed for chassis mounting with a screw terminal, it offers a maximum power dissipation of 694W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 27ns fall time and 75ns turn-off delay time, with an input capacitance of 12nF.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power694W
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Technical Specifications
Ixys IXFN44N80P technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 39A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 12nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 694W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 694W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 75ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN44N80P Datasheet
Download the complete datasheet for Ixys IXFN44N80P to view detailed technical specifications.
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