Ixys
IXFN52N90P
Power Field-Effect Transistor, 43A I(D), 900V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
PackageSOT-227-4
MountingChassis Mount
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Technical Specifications
Ixys IXFN52N90P technical specifications.
General
Package/Case
SOT-227-4
Continuous Drain Current (ID)
43A
Drain to Source Voltage (Vdss)
900V
Input Capacitance
19nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
890W
Mount
Chassis Mount
Package Quantity
10
Packaging
Rail/Tube
Rds On Max
160mR
RoHS Compliant
Yes
Series
Polar™
Compliance
RoHS
Compliant
Datasheet
Ixys IXFN52N90P Datasheet
Download the complete datasheet for Ixys IXFN52N90P to view detailed technical specifications.
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