N-channel power MOSFET featuring 500V drain-source breakdown voltage and 55A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 90mΩ drain-source on-resistance and a maximum power dissipation of 625W. Designed for chassis mounting with screw termination, it operates across a wide temperature range from -55°C to 150°C. Key parameters include a 4.5V nominal gate-source threshold voltage and a 45ns fall time.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power625W
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Technical Specifications
Ixys IXFN55N50 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 55A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 80mR |
| Dual Supply Voltage | 500V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.4nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625W |
| Mount | Chassis Mount, Screw |
| Nominal Vgs | 4.5V |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 625W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Screw |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 120ns |
| Weight | 0.046kg |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN55N50 Datasheet
Download the complete datasheet for Ixys IXFN55N50 to view detailed technical specifications.
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