N-Channel Power MOSFET, 60A continuous drain current, 600V drain-source breakdown voltage, and 75mΩ maximum drain-source on-resistance. Features include a 700W maximum power dissipation, 26ns fall time, and 110ns turn-off delay time. This silicon metal-oxide semiconductor FET is designed for chassis mounting with screw termination, operating from -55°C to 150°C. It is RoHS compliant and utilizes a MINIBLOC-4 package.
PackageSOT-227-4
Current Rating60A
MountingChassis Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFN60N60 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 60A |
| Current Rating | 60A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 75MR |
| Dual Supply Voltage | 600V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 15nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Chassis Mount |
| Nominal Vgs | 4.5V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| Rds On Max | 75mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Screw |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 110ns |
| DC Rated Voltage | 600V |
| Weight | 0.04kg |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN60N60 Datasheet
Download the complete datasheet for Ixys IXFN60N60 to view detailed technical specifications.
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