N-Channel Power MOSFET featuring 500V Drain to Source Voltage (Vdss) and 12A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 500mR Drain to Source Resistance (Rds On Max) and a maximum power dissipation of 200W. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 22ns turn-on delay and a 20ns fall time.
PackageTO-220
Current Rating12A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFP12N50P technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 12A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.15mm |
| Input Capacitance | 1.83nF |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 22ns |
| DC Rated Voltage | 500V |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFP12N50P Datasheet
Download the complete datasheet for Ixys IXFP12N50P to view detailed technical specifications.
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