The IXFP12N50PM is a TO-220AB package N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 6A and a maximum power dissipation of 50W. The device features a drain to source breakdown voltage of 500V and a drain to source resistance of 550mR. It is also RoHS compliant and available in a rail/tube packaging with a quantity of 50.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power50W
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Technical Specifications
Ixys IXFP12N50PM technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.83nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Rds On Max | 500mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFP12N50PM Datasheet
Download the complete datasheet for Ixys IXFP12N50PM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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