Ixys
IXFP76N15T2
Power Field-Effect Transistor, 76A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
Quick Jump:
Technical Specifications
Ixys IXFP76N15T2 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
76A
Drain to Source Voltage (Vdss)
150V
Input Capacitance
5.8nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
350W
Mount
Through Hole
Packaging
Rail/Tube
Rds On Max
20mR
RoHS Compliant
Yes
Series
HiPerFET™, TrenchT2™
Compliance
RoHS
Compliant
Datasheet
Ixys IXFP76N15T2 Datasheet
Download the complete datasheet for Ixys IXFP76N15T2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.