The IXFQ12N80P is a high-power N-channel transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 360W and a drain to source breakdown voltage of 800V. The device is packaged in a through-hole package and is compliant with RoHS regulations. The transistor has a continuous drain current of 12A and a gate to source voltage of 30V.
MountingThrough Hole
PolarityN-CHANNEL
Power360W
Quick Jump:
Technical Specifications
Ixys IXFQ12N80P technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 850mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 70ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFQ12N80P Datasheet
Download the complete datasheet for Ixys IXFQ12N80P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
