The IXFQ34N50P3 is a high-power MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 695W and a maximum drain to source voltage of 500V. The device is packaged in a rail/through hole package and has a turn-on delay time of 23ns and a turn-off delay time of 40ns. It features a maximum Rds on resistance of 170mR and an input capacitance of 3.26nF.
MountingThrough Hole
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Technical Specifications
Ixys IXFQ34N50P3 technical specifications.
General
| Continuous Drain Current (ID) | 34A |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.3mm |
| Input Capacitance | 3.26nF |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 695W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 170mR |
| Series | HiPerFET™, Polar3™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 23ns |
| Width | 4.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFQ34N50P3 Datasheet
Download the complete datasheet for Ixys IXFQ34N50P3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.