N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 105A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 17mΩ drain-source on-resistance. With a maximum power dissipation of 400W and a 3-pin ISOPLUS247 package, it is suitable for through-hole mounting. Operating temperature range spans from -55°C to 150°C.
Current Rating105A
MountingThrough Hole
PolarityN-CHANNEL
Power400W
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Technical Specifications
Ixys IXFR120N20 technical specifications.
General
| Continuous Drain Current (ID) | 105A |
| Current Rating | 105A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 17MR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 110ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFR120N20 Datasheet
Download the complete datasheet for Ixys IXFR120N20 to view detailed technical specifications.
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