The IXFR12N100 is a 1kV 10A power MOSFET from Ixys, featuring a maximum on-resistance of 1.1 ohms. It is designed for high-power applications and is available in a through-hole package. The device is lead-free and has an input capacitance of 2.9 nanofarads. The IXFR12N100 is suitable for use in a variety of high-voltage and high-current applications, including power supplies and motor control circuits.
Current Rating12A
MountingThrough Hole
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Technical Specifications
Ixys IXFR12N100 technical specifications.
General
| Continuous Drain Current (ID) | 10A |
| Current Rating | 12A |
| Drain to Source Voltage (Vdss) | 1kV |
| Input Capacitance | 2.9nF |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Rds On Max | 1.1R |
| Series | HiPerFET™ |
| DC Rated Voltage | 1kV |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFR12N100 Datasheet
Download the complete datasheet for Ixys IXFR12N100 to view detailed technical specifications.
No datasheet is available for this part.
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