N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 165A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 8mΩ drain-source resistance and 400W maximum power dissipation. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and includes a 2.5kV isolation voltage. Key switching characteristics include a 65ns fall time and 140ns turn-off delay time.
Current Rating165A
MountingThrough Hole
PolarityN-CHANNEL
Power400W
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Technical Specifications
Ixys IXFR180N10 technical specifications.
General
| Continuous Drain Current (ID) | 165A |
| Current Rating | 165A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 100V |
| Dual Supply Voltage | 100V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.4nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 140ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFR180N10 Datasheet
Download the complete datasheet for Ixys IXFR180N10 to view detailed technical specifications.
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