N-Channel Power MOSFET featuring 1000V drain-source breakdown voltage and 22A continuous drain current. Offers 390mΩ drain-source resistance (Rds On) and 416W maximum power dissipation. Designed for through-hole mounting in an ISOPLUS247 plastic package. Includes 21ns fall time and 75ns turn-off delay time. Operates across a wide temperature range from -55°C to 150°C.
Current Rating22A
MountingThrough Hole
PolarityN-CHANNEL
Power400W
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Technical Specifications
Ixys IXFR24N100 technical specifications.
General
| Continuous Drain Current (ID) | 22A |
| Current Rating | 22A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 390mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 8.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 416W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Radiation Hardening | No |
| Rds On Max | 390mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 1kV |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFR24N100 Datasheet
Download the complete datasheet for Ixys IXFR24N100 to view detailed technical specifications.
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