N-channel silicon power MOSFET featuring 600V drain-source breakdown voltage and 32A continuous drain current. This metal-oxide semiconductor field-effect transistor offers a low 154mΩ drain-source on-resistance and a maximum power dissipation of 500W. Designed for through-hole mounting in a TO-247-3 package, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with turn-on and turn-off delay times of 37ns and 40ns respectively. This RoHS compliant component is lead-free.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power500W
Quick Jump:
Technical Specifications
Ixys IXFR48N60Q3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 154mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 154R |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.34mm |
| Input Capacitance | 7.02nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 154mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 37ns |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFR48N60Q3 Datasheet
Download the complete datasheet for Ixys IXFR48N60Q3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
