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Technical Specifications
Ixys IXFR4N100Q technical specifications.
General
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.05nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Box |
| Polarity | N-CHANNEL |
| Power Dissipation | 80W |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 32ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFR4N100Q Datasheet
Download the complete datasheet for Ixys IXFR4N100Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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