IXFR64N50P

N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 35A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 95mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-247AD plastic package, it supports a maximum power dissipation of 300W and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include an 8.7nF input capacitance and a 5.5V threshold voltage.