Ixys
IXFT12N50F
Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
PackageTO-268
PolarityN-CHANNEL
Power180W
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Technical Specifications
Ixys IXFT12N50F technical specifications.
General
Package/Case
TO-268
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
400mR
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
180W
RoHS Compliant
Yes
Turn-Off Delay Time
28ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFT12N50F Datasheet
Download the complete datasheet for Ixys IXFT12N50F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.