N-channel MOSFET transistor for high-voltage applications, featuring a 1kV drain-source breakdown voltage and 12.5A continuous drain current. Surface-mount TO-268 package offers 300W maximum power dissipation. Low on-resistance of 900mR (max) and fast switching times with a 32ns fall time. Operates from -55°C to 150°C and is RoHS compliant.
PackageTO-268
Current Rating13A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFT13N100 technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 12.5A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 900mR |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 62ns |
| DC Rated Voltage | 1kV |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT13N100 Datasheet
Download the complete datasheet for Ixys IXFT13N100 to view detailed technical specifications.
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