IXFT16N120P

Name: IXFT16N120P Ixys
Brand: Ixys
SKU: IXFT16N120P

Power Field-Effect Transistor, 16A I(D), 1200V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

PackageTO-268

MountingSurface Mount

PolarityN-CHANNEL

Power660W

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Ixys IXFT16N120P technical specifications.

Package/Case	TO-268
Continuous Drain Current (ID)	16A
Drain to Source Breakdown Voltage	1.2kV
Drain to Source Resistance	950mR
Drain to Source Voltage (Vdss)	1.2kV
Fall Time	35ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	6.9nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	660W
Mount	Surface Mount
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	660W
Rds On Max	950mR
RoHS Compliant	Yes
Series	HiPerFET™, PolarP2™
Turn-Off Delay Time	66ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.