The IXFT18N100Q3 is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current rating of 18A and a drain to source breakdown voltage of 1kV. The device features a drain to source resistance of 660mR and a maximum power dissipation of 830W. It is packaged in a TO-268 plastic package and is suitable for surface mount applications.
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power830W
Quick Jump:
Technical Specifications
Ixys IXFT18N100Q3 technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 660mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 5.1mm |
| Input Capacitance | 4.89nF |
| Length | 16.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Rds On Max | 660mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 37ns |
| Width | 14mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT18N100Q3 Datasheet
Download the complete datasheet for Ixys IXFT18N100Q3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
