The IXFT20N100P is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 1kV and a drain to source resistance of 570mR. The device is packaged in a TO-268 package and is designed for surface mount applications. The IXFT20N100P is RoHS compliant and has a maximum power dissipation of 660W.
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power660W
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Technical Specifications
Ixys IXFT20N100P technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 570mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 570MR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 7.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 660W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 660W |
| Rds On Max | 570mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Turn-Off Delay Time | 56ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT20N100P Datasheet
Download the complete datasheet for Ixys IXFT20N100P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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