Ixys
IXFT21N50F
Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
PackageTO-268
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXFT21N50F technical specifications.
General
Package/Case
TO-268
Continuous Drain Current (ID)
21A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
250mR
Fall Time
7.7ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
RoHS Compliant
Yes
Turn-Off Delay Time
36ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFT21N50F Datasheet
Download the complete datasheet for Ixys IXFT21N50F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.