N-Channel Power MOSFET, 600V Vds, 26A Continuous Drain Current (ID). Features low 270mΩ Rds On, 460W Max Power Dissipation, and 21ns Fall Time. Operates from -55°C to 150°C with a 5V Threshold Voltage. Packaged in TO-268 for surface mounting, this silicon Metal-oxide Semiconductor FET is RoHS compliant.
PackageTO-268
Current Rating26A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXFT26N60P technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 26A |
| Current Rating | 26A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.15nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 460W |
| Rds On Max | 270mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT26N60P Datasheet
Download the complete datasheet for Ixys IXFT26N60P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
