The IXFT26N60Q is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 600V and a continuous drain current of 26A. The device has a maximum power dissipation of 360W and a drain to source on resistance of 250mR. The IXFT26N60Q is packaged in a TO-268 package and is lead-free and RoHS compliant.
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXFT26N60Q technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 250mR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 250mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 80ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT26N60Q Datasheet
Download the complete datasheet for Ixys IXFT26N60Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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