Ixys
IXFT28N50F
Power Field-Effect Transistor, 28A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
PackageTO-268
PolarityN-CHANNEL
Power315W
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Technical Specifications
Ixys IXFT28N50F technical specifications.
General
Package/Case
TO-268
Continuous Drain Current (ID)
28A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
500V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
315W
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
315W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
41ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFT28N50F Datasheet
Download the complete datasheet for Ixys IXFT28N50F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.