The IXFT28N50Q is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 28A and a drain to source breakdown voltage of 500V. The device features a low drain to source resistance of 200mR and a maximum power dissipation of 375W. It is packaged in a TO-268 case and is suitable for surface mount applications. The IXFT28N50Q is RoHS compliant and part of the HiPerFET series.
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power375W
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Technical Specifications
Ixys IXFT28N50Q technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Box |
| Polarity | N-CHANNEL |
| Power Dissipation | 375W |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 51ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT28N50Q Datasheet
Download the complete datasheet for Ixys IXFT28N50Q to view detailed technical specifications.
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