IXFT30N60Q

Name: IXFT30N60Q Ixys
Brand: Ixys
SKU: IXFT30N60Q

Power Field-Effect Transistor, 30A I(D), 600V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

PackageTO-268

MountingSurface Mount

PolarityN-CHANNEL

Power500W

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Ixys IXFT30N60Q technical specifications.

Package/Case	TO-268
Continuous Drain Current (ID)	30A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	230mR
Drain to Source Voltage (Vdss)	600V
Fall Time	16ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	4.7nF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	500W
Mount	Surface Mount
Package Quantity	1
Packaging	Box
Polarity	N-CHANNEL
Power Dissipation	500W
Rds On Max	230mR
RoHS Compliant	Yes
Series	HiPerFET™
Turn-Off Delay Time	80ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.