N-Channel Power MOSFET, 300V Drain-Source Voltage, 40A Continuous Drain Current, and 80mΩ Max Drain-Source On-Resistance. Features include a 300W Max Power Dissipation, 150°C Max Operating Temperature, and 3.1nF Input Capacitance. This silicon Metal-oxide Semiconductor FET is designed for surface mount applications in a TO-268 package. It offers a 12ns Fall Time and 40ns Turn-Off Delay Time.
PackageTO-268
Current Rating40A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFT40N30Q technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 80MR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 40ns |
| DC Rated Voltage | 300V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT40N30Q Datasheet
Download the complete datasheet for Ixys IXFT40N30Q to view detailed technical specifications.
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