N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 44A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.14ohm drain-to-source resistance and a maximum power dissipation of 650W. Designed for surface mounting in a TO-268 package, it operates from -55°C to 150°C and includes lead-free and RoHS compliant construction. Key electrical characteristics include 5.44nF input capacitance, 27ns fall time, and 85ns turn-off delay time.
PackageTO-268-3
Voltage500V
Current44A
Current Rating44A
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Technical Specifications
Ixys IXFT44N50P technical specifications.
General
| Package/Case | TO-268-3 |
| Continuous Drain Current (ID) | 44A |
| Current | 44A |
| Current Rating | 44A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.44nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 650W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 650W |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ HiPerFET™ |
| Turn-Off Delay Time | 85ns |
| Voltage | 500V |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT44N50P Datasheet
Download the complete datasheet for Ixys IXFT44N50P to view detailed technical specifications.
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