IXFT44N50Q3

Name: IXFT44N50Q3 Ixys
Brand: Ixys
SKU: IXFT44N50Q3

Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

PackageTO-268

MountingSurface Mount

PolarityN-CHANNEL

Power830W

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Ixys IXFT44N50Q3 technical specifications.

Package/Case	TO-268
Continuous Drain Current (ID)	44A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	140mR
Drain to Source Voltage (Vdss)	500V
Gate to Source Voltage (Vgs)	30V
Height	5.1mm
Input Capacitance	4.8nF
Length	16.05mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	830W
Mount	Surface Mount
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	830W
Rds On Max	140mR
RoHS Compliant	Yes
Series	HiPerFET™
Turn-Off Delay Time	37ns
Turn-On Delay Time	30ns
Width	14mm

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.