The IXFT50N20 is a high-power N-channel MOSFET with a maximum drain to source breakdown voltage of 200V and a continuous drain current of 50A. It features a low drain to source resistance of 45mR and a maximum power dissipation of 300W. The device is packaged in a TO-268 case and is suitable for surface mount applications. The operating temperature range is from -55°C to 150°C, and the device is compliant with lead-free and RoHS regulations.
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXFT50N20 technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 45MR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 72ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT50N20 Datasheet
Download the complete datasheet for Ixys IXFT50N20 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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