N-Channel Power MOSFET, 300V Drain-Source Voltage, 50A Continuous Drain Current, and 80mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a TO-268 package for surface mounting, with a maximum power dissipation of 690W and an operating temperature range of -55°C to 150°C. Key electrical characteristics include 30V Gate-Source Voltage, 3.165nF input capacitance, and fast switching times with 14ns turn-on and 24ns turn-off delays. This RoHS compliant component is designed for high-power applications.
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power690W
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Technical Specifications
Ixys IXFT50N30Q3 technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 80MR |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 5.1mm |
| Input Capacitance | 3.165nF |
| Lead Free | Lead Free |
| Length | 16.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 690W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 690W |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 14ns |
| Width | 14mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT50N30Q3 Datasheet
Download the complete datasheet for Ixys IXFT50N30Q3 to view detailed technical specifications.
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