IXFT52N30Q

N-Channel Power MOSFET, 300V Vds, 52A continuous drain current, and 60mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET features a TO-268 package for surface mounting, with a maximum power dissipation of 360W. Key electrical characteristics include 5.3nF input capacitance, 25ns fall time, and 80ns turn-off delay time. Operating temperature range spans from -55°C to 150°C, and the component is lead-free and RoHS compliant.