N-channel MOSFET, 200V drain-source breakdown voltage, 58A continuous drain current, and 40mΩ maximum drain-source on-resistance. Features a TO-268 package for surface mounting, 300W maximum power dissipation, and operates across a -55°C to 150°C temperature range. Includes 13ns fall time and 40ns turn-off delay time with 3.6nF input capacitance. Lead-free and RoHS compliant.
PackageTO-268
Current Rating58A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFT58N20Q technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 58A |
| Current Rating | 58A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 40MR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 40ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT58N20Q Datasheet
Download the complete datasheet for Ixys IXFT58N20Q to view detailed technical specifications.
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