Ixys
IXFT7N90Q
Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power180W
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Technical Specifications
Ixys IXFT7N90Q technical specifications.
General
Package/Case
TO-268
Continuous Drain Current (ID)
7A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
900V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.2nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
180W
Mount
Surface Mount
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
180W
Rds On Max
1.5R
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
42ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFT7N90Q Datasheet
Download the complete datasheet for Ixys IXFT7N90Q to view detailed technical specifications.
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