N-channel Power MOSFET, 80V Drain-Source Voltage, 80A Continuous Drain Current. Features 9mΩ Max Drain-Source Resistance at 10V Vgs, 180nC Typical Gate Charge, and 4800pF Typical Input Capacitance. Packaged in a TO-268-AA (TO-268) lead-frame SMT with gull-wing leads for surface mounting. This single-element MOSFET utilizes HiperFET process technology and operates within a temperature range of -55°C to 150°C.
PackageTO-268
MountingSurface Mount
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Technical Specifications
Ixys IXFT80N08 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-268-AA |
| Package/Case | TO-268 |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 16.05(Max) |
| Package Width (mm) | 14(Max) |
| Package Height (mm) | 5.1(Max) |
| Seated Plane Height (mm) | 5.35(Max) |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-268AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HiperFET |
| Maximum Drain Source Voltage | 80V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 80A |
| Maximum Drain Source Resistance | 9@10VmOhm |
| Typical Gate Charge @ Vgs | 180@10VnC |
| Typical Gate Charge @ 10V | 180nC |
| Typical Input Capacitance @ Vds | 4800@25VpF |
| Maximum Power Dissipation | 300000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6D7E2 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Ixys IXFT80N08 Datasheet
Download the complete datasheet for Ixys IXFT80N08 to view detailed technical specifications.
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