The IXFT80N15Q is a high-power N-channel transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 150V and a continuous drain current of 80A. The device is packaged in a TO-268 case and is suitable for surface mount applications. The IXFT80N15Q is RoHS compliant and has a maximum power dissipation of 360W.
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXFT80N15Q technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 22.5mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 22.5mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 68ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT80N15Q Datasheet
Download the complete datasheet for Ixys IXFT80N15Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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