Ixys
IXFT86N30T
Power Field-Effect Transistor, 86A I(D), 300V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
PackageTO-268
MountingSurface Mount
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Technical Specifications
Ixys IXFT86N30T technical specifications.
General
Package/Case
TO-268
Continuous Drain Current (ID)
86A
Drain to Source Voltage (Vdss)
300V
Input Capacitance
11.3nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
860W
Mount
Surface Mount
Packaging
Rail/Tube
Rds On Max
43mR
RoHS Compliant
Yes
Series
HiPerFET™, TrenchT2™
Compliance
RoHS
Compliant
Datasheet
Ixys IXFT86N30T Datasheet
Download the complete datasheet for Ixys IXFT86N30T to view detailed technical specifications.
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