The IXFT9N80Q is a high-power N-channel power MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 800V and a continuous drain current of 9A. The device has a maximum power dissipation of 180W and a gate to source voltage of 20V. It is packaged in a TO-268 surface mount package and is RoHS compliant.
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power180W
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Technical Specifications
Ixys IXFT9N80Q technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.1R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Box |
| Polarity | N-CHANNEL |
| Power Dissipation | 180W |
| Rds On Max | 1.1R |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 42ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFT9N80Q Datasheet
Download the complete datasheet for Ixys IXFT9N80Q to view detailed technical specifications.
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