The IXFV12N80P is a high-power N-channel power MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a maximum power dissipation of 360W and a drain to source breakdown voltage of 800V. The device has a continuous drain current rating of 12A and a drain to source resistance of 850mR. It is packaged in a TO-220-3 package and is available in a rail/tube packaging format. The IXFV12N80P is RoHS compliant and is part of the HiPerFET and PolarHT series.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXFV12N80P technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 850mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 70ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFV12N80P Datasheet
Download the complete datasheet for Ixys IXFV12N80P to view detailed technical specifications.
No datasheet is available for this part.
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